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PD - 94363A
IRF6602
DirectFETTM Power MOSFET
l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount
VDSS
20V
RDS(on) max
13m@VGS = 10V 19m@VGS = 4.5V
ID
11A 8.8A
Techniques
DirectFETTM ISOMETRIC
Description
The IRF6602 combines the latest HEXFET(R) Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance charge product in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%. The IRF6602 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6602 has been optimized for parameters that are critical in synchronous buck converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter
VDS ID @ TC = 25C ID @ TC = 70C IDM PD @TC = 25C PD @TC = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
20 11 8.8 88 2.3 1.5 18 20 -55 to + 150
Units
V A
W mW/C V C
Thermal Resistance
Symbol
RJA RJA RJA RJC RJ-PCB
Parameter
Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Case Junction-to-PCB mounted
Typ.
--- 12.5 20 3.0 1.0
Max.
55 --- --- --- ---
Units
C/W
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1
04/24/02
IRF6602
Static @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 20 --- --- --- 1.0 --- --- --- --- Typ. --- 0.022 10 14 --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 13 VGS = 10V, ID = 11A m 19 VGS = 4.5V, ID = 8.8A 3.0 V VDS = VGS, ID = 250A 20 VDS = 16V, VGS = 0V A 125 VDS = 16V, VGS = 0V, TJ = 125C 200 VGS = 20V nA -200 VGS = -20V
Dynamic @ TJ = 25C (unless otherwise specified)
Symbol
gfs Qg Qg Qgs1 Qgs2 Qgd Q sw Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Cont FET Total Gate Charge Sync FET Pre-Vth Gate-Source Charge Post-Vth Gate-Source Charge Gate to Drain Charge Switch Charge (Qgs2 + Qgd) Output Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 20 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 13 11 3.5 1.3 4.8 6.1 19 11 58 15 5.5 1420 960 100 Max. Units Conditions --- S VDS = 10V, ID = 8.8A 20 VGS = 5.0V, VDS = 10V, ID = 8.8A --- VGS = 5.0V, VDS < 100mV --- VDS = 16V, ID = 8.8A --- nC --- --- --- VDS = 16V, VGS = 0V --- VDD = 15V --- ID = 8.8A ns --- RG = 1.8 --- VGS = 4.5V --- VGS = 0V --- VDS = 10V --- pF = 1.0MHz
Avalanche Characteristics
Symbol
EAS IAR
Parameter
Single Pulse Avalanche Energy Avalanche Current
Typ.
--- ---
Max.
97 8.8
Units
mJ A
Diode Characteristics
Symbol
IS
ISM
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Recovery Recovery Recovery Time Charge Time Charge
Min. Typ. Max. Units --- --- --- --- 11 A 88 1.2 --- 62 77 64 82 V ns nC ns nC
VSD trr Q rr trr Q rr
--- 0.83 --- 0.65 --- 42 --- 51 --- 43 --- 55
Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25C, IS = 8.8A, VGS = 0V TJ = 125C, IS = 8.8A, VGS = 0V TJ = 25C, IF = 8.8A, VR=15V di/dt = 100A/s TJ = 125C, IF = 8.8A, VR=15V di/dt = 100A/s
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IRF6602
1000
VGS 10V 5.0V 4.5V 4.0V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP
1000
ID , Drain-to-Source Current (A)
100
ID , Drain-to-Source Current (A)
100
VGS 10V 5.0V 4.5V 4.0V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP
10
10
2.7V
2.7V
20s PULSE WIDTH Tj = 25C
1 0.1 1 10 100 1 0.1 1
20s PULSE WIDTH Tj = 150C
10 100
VDS , Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100.00
2.0
T J = 150C
I D = 11A
ID , Drain-to-Source Current ( )
1.5
10.00
(Normalized)
T J = 25C
R DS(on) , Drain-to-Source On Resistance
1.0
0.5
1.00 2.0 2.5 3.0
VDS = 15V 20s PULSE WIDTH
3.5 4.0 4.5 5.0
0.0 -60 -40 -20 0 20 40 60 80
V GS = 10V
100 120 140 160
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature
( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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3
IRF6602
100000
6
VGS = 0V, f = 1 MHZ Ciss = C + C , C gs gd ds SHORTED Crss = C gd Coss = C + C ds gd
VGS, Gate-to-Source Voltage (V)
ID = 8.8A
VDS = 16V
5
10000
C, Capacitance(pF)
4
1000
Ciss Coss
2
100
Crss
1
10 1 10 100
0 0 4 8 12 16
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000 OPERATION IN THIS AREA LIMITED BY R DS (on)
TJ = 150 C
I SD, Reverse Drain Current (A)
10
ID, Drain-to-Source Current (A)
100
100sec 10 1msec 10msec 1 Tc = 25C Tj = 150C Single Pulse 0.1 0 1 10 100 VDS , Drain-toSource Voltage (V)
T J= 25 C
1
0.1 0.2 0.4 0.6 0.8 1.0
V GS = 0 V
1.2 1.4
V SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF6602
12
VDS VGS
9
RD
D.U.T.
+
RG
-VDD
I D , Drain Current (A)
4.5V
6
Pulse Width 1 s Duty Factor 0.1 %
3
Fig 10a. Switching Time Test Circuit
VDS 90%
0 25 50 75 100 125 150
TC , Case Temperature ( C)
Fig 9. Maximum Drain Current Vs. Ambient Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
100
(Z thJA )
D = 0.50
0.20 10 0.10
Thermal Response
0.05
0.02 1 0.01
SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1
Notes: 1. Duty factor D = 2. Peak T t1/ t
2 J = P DM x Z thJA
P DM t1 t2 +T A 10
1
100
t 1, Rectangular Pulse Duration (sec)
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF6602
R DS (on) , Drain-to-Source On Resistance (m )
20
R DS(on) , Drain-to -Source On Resistance (m )
1150
950
15 VGS = 4.5V
750
550
10
VGS = 10V
350
150
ID = 11A
5 0 20 40 60 80 100 ID , Drain Current (A)
-50 2.0 4.0 6.0 8.0 10.0
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
Fig 13. On-Resistance Vs. Gate Voltage
50K 12V .2F .3F
VGS
QGS
D.U.T. + V - DS
QG QGD
250
VG
VGS
3mA
Charge
200
IG ID
Current Sampling Resistors
TOP ID 3.9A 7.0A 8.8A BOTTOM
Fig 13a&b. Basic Gate Charge Test Circuit and Waveform
E AS , Single Pulse Avalanche Energy (mJ)
150
100
15 V
V (B R )D S S tp VD S L DRIVE R
50
RG 20V IAS tp
D .U .T IA S 0.01
+ V - DD
0 25 50 75 100 125 150
A
Starting Tj, Junction Temperature
( C)
Fig 14a&b. Unclamped Inductive Test circuit and Waveforms
Fig 14c. Maximum Avalanche Energy Vs. Drain Current
6
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IRF6602
DirectFETTM Outline Dimension
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7
IRF6602
DirectFETTM PCB Footprint
DirectFETTM Tape and Reel Dimension
8
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IRF6602
DirectFETTM Part Marking
Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400s; duty cycle 2%. Surface mounted on 1 in square Cu board. Used double sided cooling, mounting pad. Mounted on minimum footprint full size board with metalized back and with small clip heatsink. TC measured with thermal couple mounted to top (Drain) of part. Starting TJ = 25C, L = 2.5mH, RG = 25, IAS = 8.8A. (See Figure 14)
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.04/02
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